Education and Research Experience
· 2006 - 2010: Bachelor's degree in Physics, Tianjin Normal University
· 2011 - 2016: Ph.D. in Condensed Matter Physics, Beijing Normal University
· 2016 - 2021: Postdoctoral Fellow, Department of Physics, Tsinghua University
· 2021 - 2022: Assistant Researcher, Department of Physics, Tsinghua University
· 2022 - Present: Specially Appointed Researcher, University of Science and Technology of China
Current Research Directions
· Magnetoelectric coupling and multiferroic materials
· Spintronics
· Strongly correlated functional oxide thin films
Major Research Achievements: In recent years, Dr. Shen has focused on the control of properties, materials design, and information storage functions of functional oxide materials. His relevant results have been published in journals such as Nat. Mater. Phys. Rev. X, PNAS, Nat. Common., and Adv. Mater. His significant contributions include:
1. Development of New Strategies for Property Regulation: He pioneered the ion control strategy, achieving field-controlled magnetic phase transitions in ferromagnetic metal oxide thin films using a field-controlled protonation method. This strategy also induced ferromagnetism in paramagnetic metal oxide thin films and revealed electromagnetic correlation characteristics. He extended this ion control strategy to control the state of materials such as insulating tungsten oxide, nickel-based superconducting thin films, and two-dimensional topological material single crystals.
2. Material Design Innovation: He proposed a new method for designing materials by regulating the ionic polyhedral units of the materials. This led to the creation of new magnetoelectric coupling materials exhibiting coexistence of ferromagnetism, polarization, and metallicity, and the discovery of intrinsic nonreciprocal resistance effects and topological magnetic structures robust against strong fields.
3. Construction of Ferroelectric Tunnel Junctions: He developed silicon-compatible ferroelectric tunnel junctions with non-destructive information reading capability, achieving prototypes of non-volatile memory with excellent comprehensive performance, including ultra-fast operation speed and low write current.
Major Scientific Research Projects
· 2024 - 2027: General Program of National Natural Science Foundation of China (Principal Investigator)
· 2022 - 2025: National Key R&D Program (Sub-project Leader)
· 2023 - 2024: Youth Innovation Fund of USTC (Principal Investigator)
· 2022 - 2024: Open Fund of the State Key Laboratory of New Ceramics and Fine Processing at Tsinghua University (Principal Investigator)
· 2023 - 2025: Original Special Project of National Natural Science Foundation of China (Core Member)
· 2020 - 2021: Youth Science Fund of National Natural Science Foundation of China (Principal Investigator)
Representative Papers (ORCID: https://orcid.org/0000-0002-7307-2473)
(# indicates co-first author, * indicates corresponding author)
Zijian Wang, Zeyu Guan, He Wang, Xiang Zhou, Jiachen Li, Shengchun Shen*, Yuewei Yin, Xiaoguang Li*, Pure ZrO2 Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing, ACS Appl. Mater. Interfaces (2024). DOI:https://doi.org/10.1021/acsami.4c01234
Jianbing Zhang#, Shengchun Shen#, Danilo Puggioni#, Meng Wang#, Haozhi Sha#, Xueli Xu, Yingjie Lyu, Huining Peng, Wandong Xing, Lauren N. Walters, Linhan Liu, Yujia Wang, De Hou, Chuanying Xi, Li Pi, Hiroaki Ishizuka, Yoshinori Kotani, Motoi Kimata, Hiroyuki Nojiri, Tetsuya Nakamura, Tian Liang, Di Yi, Tianxiang Nan, Jiadong Zang, Zhigao Sheng, Qing He, Shuyun Zhou, Naoto Nagaosa, Ce-Wen Nan, Yoshinori Tokura, Rong Yu*, James M. Rondinelli*, Pu Yu*, A correlated ferromagnetic polar metal by design. Nature Materials (2024). DOI: https://doi.org/10.1038/s41563-024-01856-6
He Wang, Zeyu Guan, Jiachen Li, Zhen Luo, Xinzhe Du, Zijian Wang, Haoyu Zhao, Shengchun Shen*, Yuewei Yin*, Xiaoguang Li*, Silicon-Compatible Ferroelectric Tunnel Junctions with A SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low-Voltage and Ultra-High-Speed Memristors. Advanced Materials 36, 2211305 (2024). DOI: https://doi.org/10.1002/adma.202211305
Yiwei Wang, Zhiwei Bao, Song Ding, Jiangheng Jia, Zhizhan Dai, Yaoxin Li, Shengchun Shen*, Songchao Chu, Yuewei Yin*, Xiaoguang Li*, γ‐Ray Irradiation Significantly Enhances Capacitive Energy Storage Performance of Polymer Dielectric Films. Advanced Materials 36, 2308597 (2024). DOI: https://doi.org/10.1002/adma.202308597
Jiachen Li, He Wang, Xinzhe Du, Zhen Luo, Yuchen Wang, Weiping Bai, Xingsong Su, Shengchun Shen*, Yuewei Yin*, Xiaoguang Li. High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM. Applied Physics Letter 122, 082901 (2023). DOI: https://doi.org/10.1063/5.0131355
Shengchun Shen*, Meng Wang, Yang Zhang, Yingjie Lyu, Di Tian, Chang Gao, Youwen Long, Jin Zhao, Pu Yu*. Coexistence of Both Localized Electronic States and Electron Gas at Rutile TiO2 Surfaces. Advanced Materials 35, 2301453 (2023). DOI: https://doi.org/10.1002/adma.202301453
Xin-Zhe Du, Zhen Luo, Sheng-Chun Shen*, Wei-Ping Bai, Hui Gan, Yue-Wei Yin, Xiao-Guang Li*. High-κ Hf0.3Zr0.7O2 film with morphotropic phase boundary for DRAM capacitor by controlling H2O dose. Applied Surface Science 638, 158078 (2023). DOI: https://doi.org/10.1016/j.apsusc.2023.158078
Yuchen Wang, Si Liu, Zhen Luo, Hui Gan, He Wang, Jiachen Li, Xinzhe Du, Haoyu Zhao, Shengchun Shen*, Yuewei Yin, Xiaoguang Li. Ultralow subthreshold swing of a MOSFET caused by ferroelectric polarization reversal of Hf0.5Zr0.5O2 thin films. ACS Applied Materials & Interfaces 15, 42764 (2023). DOI: https://doi.org/10.1021/acsami.3c08163
Xiang Zhou, Haoyang Sun, Jiachen Li, Xinzhe Du, He Wang, Zhen Luo, Zijian Wang, Yue Lin, Shengchun Shen*, Yuewei Yin*, Xiaoguang Li. A flexible Hf0.5Zr0.5O2 thin film with highly robust ferroelectricity. Journal of Materiomics 10, 210 (2023). DOI: https://doi.org/10.1016/j.jmat.2023.05.010
Hui Gan, Shengchun Shen*, Yaoxin Li, Yuewei Yin, Xiaoguang Li*. Performance manipulation of ferroelectric tunnel junctions via oxygen vacancies in barrier. Acta Materialia 255, 119101 (2023). DOI: https://doi.org/10.1016/j.actamat.2023.119101
Xiang Ding#, Shengchun Shen#, Huaqian Leng, Minghui Xu, Yan Zhao, Junrui Zhao, Xuelei Sui, Xiaoqiang Wu, Haiyan Xiao, Xiaotao Zu, Bing Huang, Huiqian Luo, Pu Yu, Liang Qiao*. Stability of superconducting Nd0.8Sr0.2NiO2 thin films. Science China Physics, Mechanics & Astronomy 65, 267411 (2022). DOI: https://doi.org/10.1007/s11433-021-1871-x
Shengchun Shen, Zhuolu Li, Zijun Tian, Weidong Luo*, Satoshi Okamoto*, Pu Yu*. Emergent ferromagnetism with Fermi-liquid behavior in proton intercalated CaRuO3. Physical Review X, 11, 021018 (2021). DOI: https://doi.org/10.1103/PhysRevX.11.021018
Di Tian#, Zhiwei Liu#, Shengchun Shen#, *, Zhuolu Li, Yu Zhou, Hongquan Liu, Hanghui Chen*, Pu Yu*. Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain. Proceedings of the National Academy of Sciences, 118, e2101946118 (2021). DOI: https://doi.org/10.1073/pnas.210194611
Zhuolu Li#, Shengchun Shen#, Zijun Tian#, Kyle Hwangbo#, Meng Wang, Yujia Wang, F Michael Bartram, Liqun He, Yingjie Lyu, Yongqi Dong, Gang Wan, Haobo Li, Nianpeng Lu, Jiadong Zang, Hua Zhou, Elke Arenholz, Qing He, Luyi Yang*, Weidong Luo*, Pu Yu*. Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution. Nature Communications 11, 184 (2020). DOI: https://doi.org/10.1038/s41467-019-13999-1
Haoxiong Zhang#, Awabaikeli Rousuli#, Shengchun Shen#, Kenan Zhang, Chong Wang, Laipeng Luo, Jizhang Wang, Yang Wu, Yong Xu, Wenhui Duan, Hong Yao, Pu Yu*, Shuyun Zhou*. Enhancement of superconductivity in organic-inorganic hybrid topological materials. Science Bulletin 65, 188 (2020). DOI: https://doi.org/10.1016/j.scib.2019.11.021
Meng Wang#, Shengchun Shen#, Jinyang Ni, Nianpeng Lu, Zhuolu Li, Hao‐Bo Li, Shuzhen Yang, Tianzhe Chen, Jingwen Guo, Yujia Wang, Hongjun Xiang, Pu Yu*. Electric-Field Controlled Phase Transformation in WO3 Thin Films through Hydrogen Evolution. Advanced Materials 29, 1703628 (2017). DOI: https://doi.org/10.1002/adma.201703628
Shengchun Shen#, Ying Xing#, Pengjie Wang#, Haiwen Liu, Hailong Fu, Yangwei Zhang, Lin He, XC Xie, Xi Lin*, Jiacai Nie*, Jian Wang*. Observation of quantum Griffiths singularity and ferromagnetism at the superconducting LaAlO3/SrTiO3(110) interface. Physical Review B 94, 144517 (2016). DOI: https://doi.org/10.1103/PhysRevB.94.144517
S. C. Shen,B. B. Chen, H. X. Xue, G. Cao, C. J. Li, X. X. Wang, Y. P. Hong, G. P. Guo, R. F. Dou, C. M. Xiong, L. He and J. C. Nie*. Gate dependence of upper critical field in superconducting (110) LaAlO3/SrTiO3 interface. Scientific Reports 6, 28379 (2016). DOI: https://doi.org/10.1038/srep28379
Sheng-Chun Shen, Yan-Peng Hong, Cheng-Jian Li, Hong-Xia Xue, Xin-Xin Wang, Jia-Cai Nie*. In-plane anisotropy in two-dimensional electron gas at LaAlO3/SrTiO3(110) interface. Chinese Physics B 25, 076802 (2016). DOI: https://doi.org/10.1088/1674-1056/25/7/076802
Yin-Long Han#, Sheng-Chun Shen#, Jie You, Hai-Ou Li, Zhong-Zhong Luo, Cheng-Jian Li, Guo-Liang Qu, Chang-Min Xiong, Rui-Fen Dou, Lin He, Don Naugle, Guo-Ping Guo, Jia-Cai Nie*. Two-dimensional superconductivity at (110) LaAlO3/SrTiO3 interfaces. Applied Physics Letter 105, 192603 (2014). DOI: https://doi.org/10.1063/1.4901940
Address: Room C309, Material Science Research Building, University of Science and Technology of China